New Methods for Growth and Characterization of GaAs and Mixed III-V Semiconductor Crystals

Abstract

The purpose of the program is to develop new and improved methods for the growth and characterization of gallium arsenide (GaAs) and mixed III-V semiconductor crystals. A new Czochralski technique has been developed. An apparatus for liquid-encapsulated floating-zone melting of III-V crystals has been constructed. The kinetics of drying and moisture absorption by boron oxide encapsulant have been measured and published. Further improvements have been made in the travelling heater growth method. A new method is being developed to lower oxygen concentrations during liquid epitaxial growth of GaAs, so as to permit growth at significantly lower temperatures. The influence of bending and short term heating on mobility and carrier concentration of GaAs has been studied.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1972
Accession Number
AD0739374

Entities

People

  • William R. Wilcox

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Compound Semiconductors
  • Crystal Growth
  • Crystal Structure
  • Crystals
  • Electrical Properties
  • Electronics Laboratories
  • Energy
  • Heat Energy
  • Latent Heat
  • Measurement
  • Semiconductors
  • Single Crystals
  • Temperature Gradients
  • Transition Temperature
  • Transitions
  • X Rays

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Thermal Physics or Thermal Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene