Spectral Analysis of Photoemissive Yields in GaAs and Related Crystals,

Abstract

The strongest optical reflectivity peak at 5 eV in GaAs and the corresponding dip at 5 eV in the photoemissive yield curve have long been associated with X(5v) to X(1c) transitions. Since recent experimental and theoretical studies indicate that X(1c) - X(5v) = 4.2 plus or minus 0.1 eV, this association is invalid. Accordingly, most of the earlier estimates of X(1c) - X(5v) and X(3c) - X(5v) in GaAs and related crystals will have to be revised, as will empirical band models based on these estimates. An improved energy band model for GaAs is reported. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1971
Accession Number
AD0739613

Entities

People

  • Frank Herman
  • William E. Spicer

Organizations

  • Lockheed Martin Missiles and Space

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Aeronautics
  • Band Structures
  • Cooperation
  • Electronics
  • Energy Bands
  • Physical Properties
  • Reflectivity
  • Transitions

Readers

  • Business Analytics
  • Optical Physics and Photonics.
  • Seismology