Recombination Studies and Radiative Transitions in Semiconductors.
Abstract
The report is concerned with electron generation and recombination processes in semiconductors. Some work is described with germanium and purified monocrystal tellurium, but emphasis is on roles of deep flaw levels in silicon and gallium arsenide. Photoionization properties, and hole capture as determined from photoconductance, are measured for indium in silicon, and for manganese, cobalt, and nickel in gallium arsenide. Experimental results are correlated with theoretical models for deep flaw states. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1972
- Accession Number
- AD0739978
Entities
People
- John S. Blakemore
- Roger A. Messenger
Organizations
- Florida Atlantic University