Investigation of the Sputtering of Monocrystals of InSb, GaAs and GaSb,
Abstract
The spatial distribution of substances sputtered from monocrystals of compounds A(III)B(V) and also its relation to the time of sputtering, the energy and mass of bombarding ions and the angle of incidence of the ions on the target are investigated. The ion bombardment is accomplished with ions of Ne(+), Kr(+) and Xe(+) with energies from 0.5 to 20 keV. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1972
- Accession Number
- AD0739986
Entities
People
- L. N. Nevsorna
- V. Yurasova