Characterization of IR Windows

Abstract

Back reflection X-ray topographic techniques have been used to characterize high resistivity GaAs single crystals. Their intended use is for high power IR windows. Initial results have revealed growth defects as well as defects induced by subsequent processing of the crystals. Strains from faceted growth were evident in most crystals. The surfaces of polished crystal section faces exhibited damage induced during the initial cutting of the crystals as well as during the polishing procedures.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1972
Accession Number
AD0740144

Entities

People

  • E. T. Peters
  • John S. Haggerty

Organizations

  • Arthur D. Little

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Coefficients
  • Contracts
  • Crystal Growth
  • Crystal Structure
  • Crystals
  • Diffraction
  • Electron Microscopy
  • Geometry
  • High Resolution
  • Intensity
  • Materials
  • Microscopes
  • Microscopy
  • Single Crystals
  • Transmission Electron Microscopy
  • X Rays

Readers

  • Geotechnical Engineering.
  • Optical Physics and Photonics.
  • Semiconductor Device Technology