Rate of Vaporization and Erosion of Silicon Carbide Based Ceramics,

Abstract

The authors study the rate of vaporization up to 2000 degrees K of ceramics based on silicon carbide and alloyed with refractory metals. Resistance of ceramics to erosion was also studied at 2000 degrees K. It was shown that intense vaporization of ceramics begins at 1950 degrees K in air and that such materials can function up to that temperature. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 04, 1972
Accession Number
AD0740195

Entities

People

  • A. I. Rekov
  • I. S. Mayauskas
  • R. I. Abraitis
  • V. E. Serebrennikova
  • V. V. Yanulis

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Advanced Materials
  • Carbides
  • Ceramic Materials
  • Compound Semiconductors
  • Elements
  • Engineered Materials
  • Generators
  • Materials
  • Metals
  • Refractory Metals
  • Resistance
  • Silicon
  • Silicon Carbide
  • Transition Temperature
  • Vaporization

Readers

  • Combustion science or combustion engineering.
  • Surface Engineering/Surface Coating Technology.