Second Breakdown and Damage in Semiconductor Junction Devices.
Abstract
The nature of second breakdown in junction devices and the relationship between second breakdown and damage are investigated both experimentally and theoretically. The experiments were performed on silicon-on-sapphire diodes using the stroboscopic method of Sunshine. Diodes of different geometry and different base doping were included so the effects of these parameters on second breakdown could be determined. The stroboscopic technique allows the temperature configuration over the diode to be determined with a spatial resolution of several microns and a temporal resolution of about 20 ns. Second breakdown can be shown to involve three stages: nucleation of a filament, growth of a relatively broad filament across the high-resistivity region, and growth of a second filament interior to the first wherein material is in a molten state. Theoretical treatments are given to the nucleation, melt transition, and filamentation aspects of the problem. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1972
- Accession Number
- AD0740226
Entities
People
- Duane H. Pontius
- Paul P. Budenstein
- Wallace B. Smith
Organizations
- Auburn University