Potential Distributions in Surface P-N Junctions,
Abstract
An analysis of the potential and charge distributions existing in surface P-N junctions is presented. These junctions arise when, for example, a thin layer of one conductivity type is formed on a substrate of opposite conductivity type. It is shown that when the layer is thin the 'built-in' potential of the semi-infinite junction, which corresponds to the Fermi level difference of the constituent P and N regions, will not be realized. For an N-type layer which is thick enough for hole enhancement to be negligible but thin enough for electron depletion to be considered complete, the built-in potential and potential across the layer are both proportional to the square of layer thickness. In thinner layers hole enhancement is important. Computations have been made for a wide range of doping concentrations in the junction. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1971
- Accession Number
- AD0740496
Entities
People
- A. K. Walton
- J. S. Hill
- W. S. Nicol