Resistivity and Carrier Lifetime in Gold-Doped Silicon
Abstract
The report describes the present status of an on-going study of the properties of gold-doped silicon. Resistivity, Hall effect, and carrier lifetime are being measured at room temperature in silicon wafers doped with varying amounts of gold and either phosphorus or boron. Reasons are being sought for the apparent discrepancy between total and electrically active gold, for the discrepancy between calculated and observed resistivity in both n-type and p-type specimens with very large gold concentration, and for the diversity in capture cross section data reported in the literature. Initial studies of the application of the surface photovoltage method to the measurement of carrier lifetime in gold-doped silicon have been completed. This method also appears to be suitable for use on gallium arsenide specimens. A bibliography of the literature on properties of gold-doped silicon that contains 136 entries is also included as an appendix.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 31, 1972
- Accession Number
- AD0740592
Entities
People
- W. M. Bullis
- W. R. Thurber
Organizations
- National Institute of Standards and Technology