Infrared Photocathode

Abstract

The amount of Cs-O low-work-function-surface material required to optimize the photoresponse of InAs(0.4)P(0.6) depends upon the wavelength at which the response is to be maximized. It is shown that the optimum thickness increases exponentially with wavelength. The effect of thick Cs-O layers on photoemission from GaAs and InAs(0.4)P(0.6) cathodes is experimentally investigated. Simple empirical relationships between the yield and thickness and between the escape probability and thickness are derived.

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Document Details

Document Type
Technical Report
Publication Date
Apr 30, 1972
Accession Number
AD0741260

Entities

People

  • H. Sonnenberg

Organizations

  • Sylvania Electric Products

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  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Attenuation
  • Cathodes
  • Conduction Bands
  • Contractors
  • Contracts
  • Efficiency
  • Electro-Optics
  • Electrons
  • Energy Bands
  • Equations
  • Materials
  • Measurement
  • Monomolecular Films
  • Quantum Efficiency
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  • Work Functions

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