Optoelectronic Electron Emitter.
Abstract
A greatly improved cold-cathode emitter was developed based on the use of liquid-phase epitaxy, (AlGa)As-GaAs heterojunctions, and negative-electron-affinity GaAs surfaces. An important part of the device is the lateral confinement of the current flow to the desired emitting surface by a novel fabrication technique involving the selective diffusion of Zn. It was shown for the first time that III-V semiconductor cold-cathodes are capable of dc operation at efficiencies and emission-current densities of practical interest, and record values were obtained which exceeded the objectives of this program. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1972
- Accession Number
- AD0741348
Entities
People
- Henry Kressel
- Herbert Nelson
- Horst Schade
Organizations
- RCA Corporation