Weak-Field Magnetoresistance and the Valence-Band Structure of SnTe

Abstract

Weak-field magnetoresistance measurements on p-type SnTe exhibit a peculiar symmetry which is temperature and carrier-concentration dependent. A Fermi-surface model is described which can account for these results and reconcile them with several other kinds of experimental measurements on SnTe. The Fermi surface consists of four prolate <111> valleys with three <100>- oriented knobs protruding from each end of each valley. The proposed model is also used to bring out some previously unreported similarities between the band structures of the Pb(1-x)Sn(x)Te and Bi(1-x)Sb(x) systems, and to examine the broader question of the connection between weak-field magnetoresistance behavior and band-structure characteristics.

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Document Details

Document Type
Technical Report
Publication Date
Sep 09, 1971
Accession Number
AD0741740

Entities

People

  • Bland Houston
  • R. S. Allgaier

Organizations

  • Naval Ordnance Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Brillouin Zones
  • Coefficients
  • Compound Semiconductors
  • Conduction Bands
  • Crystals
  • Energy Bands
  • Energy Levels
  • Experimental Data
  • Fermi Surfaces
  • Low Temperature
  • Magnetic Fields
  • Magnetoresistance
  • Materials
  • Measurement
  • Mobility
  • Valence Bands

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Materials Science and Engineering.
  • Military History of the United States in the 20th Century.