Reliability Problems with SiO2 Passivation and Glassivation

Abstract

The effect of differential expansion or contraction on the integrity of silicon integrated circuits is treated in part in this report. Specifically, relaxation of interface stress between Si and SiO2, cracks in Si or SiO2 due to upquenching, and problems with glassivation are addressed. The problems are shown to be real, and some suggestions for handling the difficulties are given.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1972
Accession Number
AD0741765

Entities

People

  • Clyde H. Lane

Organizations

  • Rome Laboratory

Tags

DTIC Thesaurus Topics

  • Air Force
  • Circuits
  • Films
  • Glass
  • Grain Growth
  • Heat Of Activation
  • High Temperature
  • Hybrid Circuits
  • Integrated Circuits
  • Materials
  • Materials Laboratories
  • Materials Testing
  • Oxide Films
  • Shock
  • Silica Glass
  • Silicon Dioxide
  • Thermal Shock

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