Electron Bombarded Semiconductor Short Pulse Generator.
Abstract
The fabrication, processing, and electrical testing of three high-current pulse amplifiers was completed. The input circuit and output load circuit were optimized. Sixty amperes of output current with 2 nanoseconds risetime was obtained from a tube containing two 0.35 sq cm area diodes. Fabrication of large area semiconductor targets continued. Diodes were successfully fabricated from 37 micrometers, 22 ohm-cm epitaxial silicon. A tube was assembled and processed through bakeout and cathode activation with the new expitaxial silicon targets. No change in diode reverse breakdown voltage was observed during processing or during pulsed operation of the high current amplifiers. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1972
- Accession Number
- AD0741856
Entities
People
- Aris Silzars
Organizations
- Watkins-Johnson Company