Growth of Epitaxial Gallium Arsenide by the Vapor Phase Process.
Abstract
The vapor phase process was used to grow n-type epitaxial gallium arsenide. The system was an open flow type, using the reagents gallium, arsenic trichloride, and hydrogen. The importance of initiating growth after saturating the gallium source with arsenic was demonstrated. The growth rate was shown to be highly dependent on both substrate temperature and total flow rate. It was shown that a higher arsenic trichloride concentration resulted in a lower net donor concentration within the epitaxial layer. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1972
- Accession Number
- AD0742428
Entities
People
- James E. Stangel
Organizations
- Air Force Institute of Technology