Application of CV Characteristics to Controlling MIS Processing.

Abstract

The purpose of this report is to determine the usefulness of the capacitance-voltage (CV) method as a process control tool. To accomplish this task a study of the physics of MIS structures and the theory of the CV method are given. Then it is shown how the method can be used to obtain various physical properties of the semiconductor, insulator, and semiconductor-insulator interface. A computer program which facilitates the determination of various properties from the CV characteristic is included. The substrate material used is n-type silicon and the kinds of insulators investigated in this study are: Si3N4:SiO2, Al2O3:SiO2, and SiO2. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1972
Accession Number
AD0742430

Entities

People

  • Robert A. Fritschie

Organizations

  • Air Force Institute of Technology

Tags

DTIC Thesaurus Topics

  • Capacitance
  • Compound Semiconductors
  • Computer Programs
  • Computers
  • Dielectrics
  • Electronics
  • Materials
  • Physical Properties
  • Semiconductors
  • Solid State Electronics
  • Substrates

Readers

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  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics