Amorphous Semiconductors
Abstract
Data have been taken on sound speed in Ge:Te:As alloys as a function of pressure and of temperature. Such data reveals the mechanical properties of the semiconducting glasses to be quite similar to those of conventional glasses. Measurement of pressure effects on dc resistivity confirm the earlier results of Fagen, et al.; ac experiments are incomplete at present. Correlations between the glass transition T(g) and electrical activation reported by Krebs are used to predict the trend of T(g) with pressure.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1972
- Accession Number
- AD0742491
Entities
People
- James C. Thompson
Organizations
- University of Texas at Austin