Quantitative Measurement of the Properties of Defects in Metals.

Abstract

In the study of defect interactions in solids the field ion microscope has become an important tool. Until now, the interpretation of field ion microscope patterns has been done primarily on the geometric relationship of the spots. A technique and an equation by which additional information can be obtained from field ion patterns, specifically with regard to the quantity of the electric field at an imaging spot, is now available as a result of the present research. By calculation of the electric field at a selected spot, quantitative field ion information can be directly employed in the study of strengthening mechanisms of materials. For example, the identity of the interstitial bright spot can be deduced if the value of the electric field is known when the spot field evaporates. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1971
Accession Number
AD0742726

Entities

People

  • Allan J. Frederick
  • Paul Gordon

Organizations

  • Illinois Institute of Technology

Tags

DTIC Thesaurus Topics

  • Absorbers (Materials)
  • Advanced Materials
  • Electric Fields
  • Engineered Materials
  • Equations
  • Identities
  • Materials
  • Mathematics
  • Measurement
  • Metamaterial Absorbers
  • Metamaterials
  • Microscopes

Readers

  • Plasma Physics.
  • Systems Analysis and Design
  • Thin Film Deposition Science.