Studies of Radiation Damage in Semiconductors

Abstract

The program on the study of radiation damage in semiconductors is described. This work divides into three areas: (1) EPR measurements on silicon and diamond; (2) optical and electrical measurements on silicon and diamond; and (3) theoretical work on these materials and their defect structures, including the nature of the amorphous state.

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Document Details

Document Type
Technical Report
Publication Date
Apr 30, 1972
Accession Number
AD0743134

Entities

People

  • James W. Corbett

Organizations

  • State University of New York at Albany

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amorphous Materials
  • Anisotropy
  • Conductivity
  • Electrical Measurement
  • Electrons
  • Elements
  • Hall Effect
  • Ion Implantation
  • Materials
  • New York
  • Optical Properties
  • Physical Properties
  • Physics
  • Radiation
  • Radiation Effects
  • Semiconductors
  • Solid State Physics

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics