Advanced Concepts of Microwave Generation and Control in Solids.
Abstract
The report deals with the progress made during the fifth quarterly period of a solid state microwave oscillator and amplifier research and development program. Discussed is the progress on the Gunn effect and related research. The progress made on a program on microwave transit time devices is also described. The following specific topics are reviewed: optimum structures for high average power TRAPATT devices; GaAs Schottky barrier avalanche diodes; nonlinearities of IMPATT reflection amplifiers; integrated IMPATT oscillators; integrated TRAPATT oscillators; high-frequency high-efficiency avalanche oscillations; high frequency PTI microwave oscillators; pulsed PTI microwave oscillators; power combining circuit studies. Finally, the progress made on the studies of solid state materials for microwave devices are reported. The topics include: ion implantation and diffusion; vacuum epitaxial growth in silicon; and ionization rates in gallium arsenide. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1972
- Accession Number
- AD0743196
Entities
People
- Colin A. Lee
- G. C. Dalman
- J. Frey
- L. F. Eastman
Organizations
- Cornell University College of Engineering