Transistor Nonlinear Damage.
Abstract
The report summarizes the study of radiation induced surface degradation of (1) discrete planar transistors and (2) of devices in a silicon hybrid array (bipolar transistors, MOSFETS, MOS capacitors). The study of planar transistors, resulted in determining (1) the relative role of the charge accumulation and of the interface states in the surface degradation, (2) that no differences exist between the type of surface effects caused by proton and gamma irradiation and (3) the possibility of 'channeling' a new mode of failure of the NPN transistor gain at very high doses. These effects were correlated with the studies of effects in hybrid array devices. Surface conditions as a function of dose were monitored primarily by gate controlled measurements on the bipolar transistors. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 15, 1972
- Accession Number
- AD0743207
Entities
People
- Louis L. Sivo
Organizations
- Boeing