Production of Epitaxial Single-Crystal Copper Films 5000 to 8000 Angstroms Thick and Accurate Determination of Their Orientation by Means of the Channeling Effect,
Abstract
The growth of epitaxial single crystal copper films 5000 to 8000 angstroms thick on a fresh rock salt clevage heated to 320C is described. Disposition took place in a given vacuum at a rate of 10 to 15 A/sec. The resultant film being annealed at the same temperature for 1 hr. The orientation of the epitaxial film and the degree of perfection of its single crystal structure were studied by a method based on the channelling effect, using a 130 to 180 keV proton beam. Films deposited on the NaCl face had an accurate orientation throughout their whole thickness. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 04, 1972
- Accession Number
- AD0743658
Entities
People
- A. L. Fainshtein
- A. M. Markus
Organizations
- National Air and Space Intelligence Center