Crystal Properties as Influenced by Crystallographic Imperfections.
Abstract
High-energy ion implantation into silicon and the formation of defect structures in silicon after implantation and after annealing is investigated. Specifically, annealing properties of amorphous layers properties of amorphous layers produced by 1 MeV C(+) and Si(+) implantations are studied. Detailed investigations of the damage and ion profiles before and after annealing are presented. It is shown that high-energy silicon bombardment of silicon can produce amorphous isolation regions in silicon and that the insulating properties of such isolation regions are stable for annealing temperatures up to 500C. Precision lattice parameter measurements made on ion-implanted silicon are reported. Double-crystal diffractometer measurements on ion-bombarded silicon are reported. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 15, 1972
- Accession Number
- AD0743935
Entities
People
- Guenter H. Schwuttke
Organizations
- International Business Machines Corporation (Armonk, NY)