X-Ray Topographic Observations of Slip Distributions in Alpha Silicon Carbide.

Abstract

An x-ray topographic study is made of three hexagonal SiC crystals, type 6H, of different national origin. All three crystals exhibit a high density of dislocations, many originating at the nucleation edge of the crystal and fanning out to the crystal boundaries. Burgers vectors were identified. Slip in the (1,1,-2,0) direction, characteristic of hexagonal materials, was observed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 30, 1972
Accession Number
AD0744076

Entities

People

  • Harold Posen
  • Jane A. Bruce

Organizations

  • Air Force Cambridge Research Laboratories

Tags

DTIC Thesaurus Topics

  • Absorbers (Materials)
  • Advanced Materials
  • Boundaries
  • Carbides
  • Ceramic Materials
  • Compound Semiconductors
  • Dislocations
  • Engineered Materials
  • High Density
  • Materials
  • Nucleation
  • Observation
  • Silicon
  • Silicon Carbide
  • X Rays

Readers

  • Fluid Dynamics.
  • Thin Film Deposition Science.