Stress-Measuring Sensor,
Abstract
A sensitivity index of up to 10-9 can be achieved for loads of a few milligrams by pressing a needle of 1 mu m radius against a semiconductor load cell. A semiconductor of the N type is coated with thin metal film and a depletion layer between the two has distinct rectifying properties. A bias voltage applied from a DC source in a reverse direction through a contact and an ohmic content causes a slight inverse current flow which is governed by the high barrier voltage at the depletion layer. Pressure by a needle reduces the width of the contact barrier and increases the inverse current sharply. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 05, 1972
- Accession Number
- AD0744163
Entities
People
- G. V. Stepanov
- M. I. Elinson
- V. I. Pokalyakin
Organizations
- National Air and Space Intelligence Center