Methods of Measurement for Semiconductor Materials, Process Control, and Devices.
Abstract
The quarterly progress report, fourteenth of a series, describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors. Supplementary data concerning staff, standards committee activities, technical services, and publications are included as appendixes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1972
- Accession Number
- AD0744946
Entities
People
- W. Murray Bullis
Organizations
- National Institute of Standards and Technology