Gunn Effect Microwave Power Source.
Abstract
An integral heat sink technology for the fabrication of high efficiency transferred electron oscillators was successfully developed. Using this technology, typical device efficiencies were increased from between 3 and 5% to between 6 and 9%. The best efficiency obtained was 14%, the highest efficiency reported to date for cw TEOs. The highest power output obtained from a single mesa device was 400 mW. The best power output-efficiency combination was 305 mW with 9% efficiency in X-band. A thermal analysis of a typical TEO structure was carried out. The influence of various device design parameters such as heat sink configurations, and nl product on device efficiency were studied. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1972
- Accession Number
- AD0745210
Entities
People
- J. P. Paczkowski
- S. Y. Narayan