Multi-Wafer Plasma Anodization.
Abstract
A prototype multi-wafer plasma anodization apparatus was designed and constructed to investigate the multi-wafer process. The apparatus uses a hot hollow cathode to generate a dense discharge capable of yielding high oxide growth rates. The samples are placed parallel to the axis of the discharge in order to study the effects on oxide growth and quality of sample position with respect to discharge regions. Plasma and anodization parameters were varied to study the effect on oxide growth rates. The quality of the tantalum oxide samples was determined by visual and microscopic inspection of surfaces and by plotting capacitance and dissipation factor profiles. Results indicate that the multi-wafer process is feasible and that samples should be placed in the positive column of the discharge near the anode. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1972
- Accession Number
- AD0746003
Entities
People
- William B. Orcutt
Organizations
- Air Force Institute of Technology