Spin-Flip Raman Scattering in Cadmium Sulfide.

Abstract

The 4880A line of an Argon laser was used to study the spin-flip Raman scattering in CdS at liquid helium temperature. The detection system utilized a Bausch and Lomb two meter spectrometer. The first high resolution photograph of Stokes spin-flip scattering in CdS was observed. The results with SdS indicate the feasibility of using this high resolution system in experiments with small g-factor materials such as GaAs, CdTe, and CdSe. The g-factor calculations for CdS give 1.54 at 83 KG, 1.62 at 91 KG and 1.74 at 96 KG. These results, in contrast with previous experimental data, give a smaller g-factor that varies with magnetic field. A possible explanation is that the spin-flip transition occurred in a donor level rather than the conduction band. The Stokes line was found to have a very narrow linewidth .33A, and its intensity was several orders of magnitude higher than the LO and TO phonons. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1972
Accession Number
AD0746219

Entities

People

  • Thomas Wain Walker

Organizations

  • Air Force Institute of Technology

Tags

DTIC Thesaurus Topics

  • Argon Lasers
  • Compound Semiconductors
  • Conduction Bands
  • Energy Bands
  • Experimental Data
  • High Resolution
  • Magnetic Fields
  • Materials
  • Photographs
  • Raman Scattering
  • Scattering

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Space Exploration and Orbital Mechanics.

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers