The Structure of Tetrahedrally Coordinated Amorphous Semiconductors
Abstract
The purpose of the report is to enlarge upon our knowledge of the structure of tetrahedrally coordinated amorphous semiconductors (among those investigated are Si, Ge, InSb, GaP, GaAs, GaSb, and GeSn) by employing high angle x-ray diffraction from which the radial distributions functions (RDF) are deduced, and by employing small angle x-ray scattering (SAS) from which the sizes and concentrations of voids are deduced. Methods of analysis of the high angle diffraction data have been devised which almost totally eliminate termination errors in the RDF. Also, in deducing the coherently scattered radiation, the incident beam energy profile has been taken into account. It is shown that its effect is to simply modify the monochromator efficiency by a constant amount.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1972
- Accession Number
- AD0746638
Entities
People
- Nigel J. Shevchik
Organizations
- Harvard University