Analysis of Aluminum Oxide Films on Silicon,
Abstract
Aluminum oxide exhibits novel and useful properties as a passivating layer on silicon surfaces. The study was concerned with the properties of hydrolytically grown aluminum oxide films on silicon. The study covered the influence of deposition temperature, of subsequent heat treatment and of anodization. The principal tool of measurement was MeV He(+) ion backscattering technique; in addition etch rates were measured and electron diffraction patterns were taken. Aluminum oxide films deposited onto silicon substrates by hydrolysis of AlCl3 show marked differences in etch rates, electron diffraction patterns and chlorine content between films grown below 700C and above 800C. However, both film types are stoichiometric. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1972
- Accession Number
- AD0747019
Entities
People
- Ian V. Mitchell
- James W. Mayer
- Mototaka Kamoshida
Organizations
- California Institute of Technology