Investigation of Silicon Carbide (SiC) Gun-Electron-Induced- Semiconductor-Hybrid-Amplifier (GEISHA) Diode Feasibility and Fabrication
Abstract
Single crystal alpha-SiC for GEISHA device application has been favorably evaluated. The electron carrier velocity has been measured up to 8, 200,000 cm/sec on 10 to the 17th power/cu cm uncompensated n-type crystals, with no indication of velocity saturation. The carrier saturation velocity is therefore expected to be above that of silicon. Measurements of the critical field have confirmed earlier work and give a value of 2 to 4 x10 to the 6th power volts/cm. Schottky barrier diodes were fabricated on a variety of SiC substrates. Barrier heights were independent of the metal layer of SiC type. Schottky barriers formed on molten salt etched 10 to the 17th power/cu cm n-type samples exhibited, 'hard' reverse voltage characteristics out to true avalanche (approximately equal to 84 volts reverse). Schottky barriers formed on compensated (approximately equal to 5 x 10 to the 15th power/cu cm) n-type material sustained reverse voltages in excess of 700 volts.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1972
- Accession Number
- AD0747270
Entities
People
- Harvey C. Nathanson
- Herbert S. Berman
- Terence M. Heng