Image Conversion Panel Techniques Using Direct Carrier Injection.

Abstract

The feasibility of real-time millimeter-wave image conversion using direct carrier injection as a means of bulk conductivity modulation has been demonstrated. A 400-element image conversion panel has been constructed using large p-i-n diode structures to control the bulk transmission of 94 GHz signals. The diodes measure 0.5 cm in width by 0.376 cm in length by 0.05 cm in thickness between injecting contacts. Ion implanted arsenic and alloyed aluminum form the n and p junctions, respectively, on high resistivity p-type silicon. A single crystal detector behind the panel was used to detect the transmitted rf signal as the panel elements were switched in succession at 25 frames/sec. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1972
Accession Number
AD0747409

Entities

People

  • J. M. Baird

Organizations

  • HRL Laboratories

Tags

DTIC Thesaurus Topics

  • Aluminum
  • Conductivity
  • Conversion
  • Crystal Detectors
  • Crystals
  • Detectors
  • Elements
  • Millimeter Waves
  • Modulation
  • Single Crystals
  • Thickness

Fields of Study

  • Materials science

Readers

  • Computer Science/Computer Engineering/Data Science/Digital Signal Processing.
  • Semiconductor Device Technology

Technology Areas

  • 5G