Interface Phenomena Integrated Circuits Oxides.
Abstract
The analytical investigation of ion migration in SiO2 layers in a MOS structure was continued and results of numerical computations are given. Progress in the experimental investigation of ion transport in (a) a SiO2 layer in a symmetrical structure of Si - SiO2 - Si, (b) insulating layers like Al2O3 on silicon and other semiconductor electrodes is also described. A method has been developed to eliminate the sodium ions from the oxide layers by an initial bias-temperature treatment followed by an etching process where approximately 100 A thickness of oxide is removed. Results are described on a change in the dielectric constant of an oxide layer after ionizing radiation possibly due to compaction. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1972
- Accession Number
- AD0747435
Entities
People
- Cadambanguidi R. Viswanathan
Organizations
- University of California, Los Angeles