Some Aspects of Construction and Production Technology in High-Frequency MOS Transistors,

Abstract

In the input stages of radio apparatus, and particularly true for TV apparatus, it is desirable to use active elements having the highest possible input impedance. Among semiconductor devices, such are the field effect transistors. One version of this type being increasingly more widely used in recent years is the MOS (metal oxide semiconductor) transistor. The paper reports on a few special structural and technical problems connected with the high-frequency n-channel MOS transistor. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 06, 1972
Accession Number
AD0747546

Entities

People

  • Gyorgy Erlaky

Organizations

  • National Air and Space Intelligence Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Field Effect Transistors
  • Frequency
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Readers

  • Economics
  • Electrical Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics