Gallium-Arsenide-Phosphide MIS Capacitor Fabrication and Radiation Studies.

Abstract

GaAsP MIS capacitors were fabricated using several dielectric-growth processes, including RF sputtering, wet oxidation, and dry oxidation of GaAsP. Depletion capacitance theory was used to calculate the neutron-induced carrier removal rate in GaAsP MIS capacitors. Annealing experiments were performed to determine whether 'permanent' radiation damage could be annealed out of the GaAsP MIS capacitors. Radiation testing of GaAsP MIS capacitors and GaAsP diodes resulted in the development of a magnetic electron deflection tube, a telescoping drift tube, an electron-beam TREE test fixture, and a radiation-hardened line-driver amplifier. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 01, 1972
Accession Number
AD0747663

Entities

People

  • D. H. Phillips
  • Wayne W. Grannemann

Organizations

  • University of New Mexico

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Capacitors
  • Corpuscular Radiation
  • Electromagnetic Radiation
  • Electron Beams
  • Electrons
  • Gallium Arsenides
  • Oxidation
  • Radiation
  • Test Fixtures

Readers

  • Integrated Circuit Design and Technology.
  • Marine Ecological Systems Migration
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems
  • Space
  • Space - Hall-Effect Thruster