Electron Beam Semiconductor Amplifier (L-Band).
Abstract
The goal of this program is to design, develop, fabricate and test exploratory development models of an L-band, RF pulse amplifier capable of 2000 watts peak RF output power at 1300 MHz plus or minus 10% with a power gain of 25 dB at 50% efficiency. Effort during this period has been concentrated on a diode passivation and stabilization study with the goal of developing semiconductor targets that are stable under electron beam bombardment. Various sizes and types of diodes have been fabricated with silicon-dioxide and phosphorus glass passivation. These have been tested under electron beam bombardment and some have been baked out and operated in a sealed off device. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1972
- Accession Number
- AD0747868
Entities
People
- James A. Long
Organizations
- Watkins-Johnson Company