Transient Surface Damage.
Abstract
Measurements made on MOS structures during the 0.0001 to 1000 second interval following pulsed irradiation demonstrate that a rapid annealing phase is associated with the space charge decay in SiO2. This phenomenon is characterized in state-of-the-art thermal oxides and in oxides implanted or doped with various impurity species. A model involving thermal release of the trapped positive charge from a distribution of trapping sites in the oxide's forbidden band conveniently approximates the major features of short-term annealing. Energy density distributions for the trapped charge are developed from the annealing data and are compared for different oxides. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1972
- Accession Number
- AD0748007
Entities
People
- Mayrant Simons
Organizations
- RTI International