Error Estimate for Thermal Resistance Measurements on Uncoated Si Microwave Transistors as Result of Temperature Gradients
Abstract
A vertical temperature gradient's effect upon temperature radiation emitted from partially metalized silicon (Si) transistor substrates has been investigated. The theoretical error of a surface temperature reading, obtained with the IR scanning method, has been estimated. This numerical analysis indicates that significant temperature errors occur only for n-resistivities above 0.02 ohm.cm and for p-resistivities above 0.05 ohm.cm; consequently, no surface coating with paint is necessary for lower resistive substrates.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1972
- Accession Number
- AD0748073
Entities
People
- Herbert L. Mette
Organizations
- United States Army Communications-Electronics Command