Electron Bombarded Semiconductor Short Pulse Generator
Abstract
Improved fabrication processes for large area semiconductor targets and complete high current amplifiers were developed. Large area (1.40 sq. cm. active area) semiconductor diodes, with leakage current of less than 10 mA at reverse bias voltages of 250 volts were fabricated. Initial tests were made on a completely processed tube with an internal getter instead of a two liter appendage pump. Three complete high current pulse amplifiers were fabricated and tested for diode saturation characteristics and pulse performance. The performance was determined for both grid-driven and cathode-driven operation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1972
- Accession Number
- AD0748090
Entities
People
- Aris Silzars
Organizations
- Watkins-Johnson Company