On the 'Excess White Noise' in MOS(Metal Oxide Semiconductors) Transistors

Abstract

Special silicon MOS transistors are fabricated to demonstrate that the proposed 'excess white noise' attributed to the mobility fluctuation does not exist. The previously observed excess noise over the white thermal noise is shown to be caused by the a 1/f-type noise component due to noise measurements at insufficiently high frequencies on devices which have very high 1/f noise.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1970
Accession Number
AD0748329

Entities

People

  • C. T. Sah
  • L. D. Yau

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Carrier Mobility
  • Electrical Engineering
  • Equations
  • Experimental Data
  • Frequency
  • Impurities
  • Measurement
  • Metal Oxide Semiconductors
  • Mobility
  • Noise
  • Saturation
  • Semiconductors
  • Spatial Distribution
  • Substrates
  • Transistors
  • White Noise

Readers

  • Image Processing and Computer Vision.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene