New Methods for Growth and Characterization of GaAs and Mixed 3-5 Semiconductor Crystals

Abstract

The purpose of the program is to develop new and improved methods for the growth and characterization of gallium arsenide (GaAs) and mixed III-V semiconductor crystals. A new Czochralski technique was developed which permits fairly routine growth of dislocation-free GaAs crystals. An apparatus for liquid-encapsulated floating-zone melting of III-V crystals was constructed and is gradually being improved. A new method was developed to lower oxygen concentrations during liquid epitaxial growth of GaAs, so as to permit growth at significantly lower temperatures and analysis of the oxygen content of semiconductors. The influence of bending and short term heating on mobility and carrier concentration of GaAs has been studied.

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Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1972
Accession Number
AD0748344

Entities

People

  • William R. Wilcox

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Chemistry
  • Crystals
  • Electrical Properties
  • Heat Energy
  • Heat Of Fusion
  • Heat Transfer
  • Heat Transfer Coefficients
  • Latent Heat
  • Materials
  • Materials Science
  • Measurement
  • Radio Frequency Generators
  • Semiconductors
  • Silicon Carbide
  • Temperature Gradients
  • Thermal Conductivity
  • Transitions

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene