High Temperature Oxidation of Silicon Carbide

Abstract

Thermogravimetric measurements were made for the oxidation of hot pressed silicon carbide at an oxygen pressure of 150 torr and at temperatures from 1300C to 1600C. Oxidized samples were then analyzed using X-ray, metallograph, and electron probe techniques. The oxidation rate was found to increase with temperature. The products of oxidation were a carbon oxide and a protective layer of silica. The silica was primarily amorphous with some tridymite or alpha-cristobalite.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1972
Accession Number
AD0748351

Entities

People

  • Warren J. Miller

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Carbon Monoxide
  • Chemical Elements
  • Chemical Synthesis
  • Chemistry
  • Dielectric Gases
  • High Temperature
  • Literature Surveys
  • Materials
  • Materials Science
  • Measurement
  • Oxide Films
  • Partial Pressure
  • Silicon Carbide
  • Silicon Dioxide
  • Tectosilicates
  • X Rays

Fields of Study

  • Materials science

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Materials Science and Engineering.
  • Thermal Physics or Thermal Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene