Fundamental Studies of Semiconductor Heteroepitaxy
Abstract
The objective of this program is to carry out a fundamental study of nucleation and film growth mechanisms in heteroepitaxial semiconductor thin films, and to apply the results to the preparation of improved films and thin- film devices on insulating substrates. Both theoretical and experimental investigations are involved, with emphasis on chemical vapor deposition (CVD) techniques applied to the Si-on-Al2O3, Si-on-MgAl2O4, and GaAs-on-Al2O3 systems. The accomplishments of the fourth six-month period are described in terms of seven program subtasks.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1972
- Accession Number
- AD0748424
Entities
People
- A. James Hughes
- Arthur C. Thorsen
- Harold M. Manasevit
- Joseph L. Kenty
- Ralph P. Ruth