Structural Effects on Electrical Properties in Amorphous Semiconductors
Abstract
Work has continued on a survey of the structure, electrical and magnetic properties of transition metal oxide-phosphate glasses and glasses in the As2Te3-As2Se3 system which possess electrical or magnetic device potential. Results of magnetic and electrical observations in several transition metal- phosphate glasses have revealed a high degree of magnetic and structural order. The pronounced influence of glass-glass phase separation and compositional segregation has also been noted. Examination of a series of FeO-P2O5 glasses has revealed a glass forming range which extends to 80 mole % FeO. Low temperature susceptibility and Mossbauer spectroscopy results on these glasses are reported herein. Low temperature susceptibility of the manganese, vanadium and iron glasses indicate that these glasses are all amorphous antiferromagnetic systems with a distinctive downward curvature of the reciprocal susceptibility versus temperature plot. Detailed studies of the As2Te3-As2Se3 system has shown switching behavior which can be controlled with compositional variation. The compositional variation of the microstructure is noted in micrographs included in the report.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 30, 1972
- Accession Number
- AD0748661
Entities
People
- D. L. Kinser
- L. K. Wilson
Organizations
- Vanderbilt University