Radiation Defects in Silicon Irradiated by Protons, Deuterons, and Alpha Particles,
Abstract
The article considers the spatial distribution of radiation defects in silicon irradiated by protons, deuterons and alpha particles with energies of 6 MeV/nucleon. The silicon crystals of n- and p-type had different initial specific resistances. The beam of particles fell along the normal to the edge of the specimen. After irradiation the specific resistance of the specimen was measured along the path of the particles. The measurements were made by the compensation probe method. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1972
- Accession Number
- AD0748734
Entities
People
- M. A. Kumakhov
- T. I. Kovomenskaya
- Yu. Bulgakov
Organizations
- National Air and Space Intelligence Center