Optical and Electrical Properties of Amorphous Elemental Semiconductors

Abstract

A number of films of amorphous germanium have been deposited at liquid helium temperature and the electrical and optical properties and the effect of annealing on these properties have been investigated. Previous work on amorphous silicon is also reviewed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1972
Accession Number
AD0748856

Entities

People

  • Robert Glosser
  • Rolfe E. Glover Iii

Organizations

  • University of Maryland

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Annealing
  • Coefficients
  • Conductivity
  • Electrical Properties
  • Electronics
  • Germanium
  • Heat Of Activation
  • High Temperature
  • Long Wavelengths
  • Low Temperature
  • Materials
  • Measurement
  • Optical Absorption
  • Optical Properties
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene