A Center of Competence in Solid State Materials and Devices
Abstract
The increase in terminal currents and noise observed at high drain bias in MOS field-effect transistors is explained by quantitative models that give predictions in good agreement with experiment. We describe the fabrication and resulting properties of a new type of Schottky barrier photodiode. An explanation is proposed for the fall-off in quantum yield observed in metal- semiconductor photodiodes for excitation wavelengths in the near UV region of the spectrum. New results are given for the electron and hole capture rates associated with the defect centers produced by nickel in germanium. The results of basic optical and electrical measurements are reported for amorphous semiconductor As2Se3Sb2Se3 films fabricated by evaporation. Monochromated Guinier-deWolff and Guinier-Lenne x-ray powder cameras and a scanning microdensitometer are combined into a data system for studying solid state reaction kinetics. The changes in the short range ordered structure of an Ni3Fe alloy are determined for a series of anneals between 0 and 40 hours at 480C.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 10, 1972
- Accession Number
- AD0748862
Entities
People
- Eugene R. Chenatte
- Fredrik A. Lindholm
- Larry L. Hench
- Robert W. Gould
- Shengsan Li
Organizations
- University of Florida