Electron Beam Semiconductor Amplifier (L-Band).
Abstract
The goal of the program is to design, develop, fabricate and test exploratory development models of an L-band, RF pulse amplifier capable of 2 kilowatts peak output RF power at 1300 MHz plus or minus 10%, with a 25 dB power gain at 50% efficiency. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1972
- Accession Number
- AD0748898
Entities
People
- James A. Long
Organizations
- Watkins-Johnson Company