Characterization of IR Windows

Abstract

The report includes studies on transmission electron microscopy of several of the initially received samples of GaAs crystals as well as back reflection X-ray topography of two additional lots of samples received from Bell + Howell. Transmission electron microscopy revealed evidence for the presence of very fine (<100A) defects having a density of 1 to 5 x 10 to the 17th power/cc. Preliminary calculations based on assumed metallic or dielectric properties indicate that the observed optical absorptivities at 10.6 microns could be caused by these defects.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1972
Accession Number
AD0749083

Entities

People

  • Edward T. Peters
  • John S. Haggerty

Organizations

  • Arthur D. Little

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Coefficients
  • Contracts
  • Crystals
  • Diffraction
  • Electron Diffraction
  • Electron Microscopes
  • Electron Microscopy
  • Measurement
  • Microscopy
  • Optical Absorption
  • Photographic Emulsions
  • Polishing
  • Radiation
  • Transmission Electron Microscopy
  • X Rays

Fields of Study

  • Physics

Readers

  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology
  • Spectroscopy.

Technology Areas

  • Microelectronics